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INVESTIGATION OF THE WIDTH OF THE FORBIDDEN ZONEHEAVILY DOPED SEMICONDUCTORS

I. G. Tursunov
Chirchik State Pedagogical University, Uzbekistan
M. A. Rakhmanov
Chirchik State Pedagogical University, Uzbekistan
tajiir 2024
VOL. 6 / NO. 11 NOVEMBER
VOLUME 6
ISSUE 11
YEAR 2024
PAGES 10-14

Abstract

The work examines changeswidth of the forbidden zoneheavily doped semiconductors. The introduction of impurities into the crystal lattice at low concentrations does not change the width forbidden zones semiconductor and does not affect the energy spectrum of electrons. Only discrete levels appear in the forbidden zone. When the concentration of impurities becomes large enough, the energy spectrum and the width of the BG of the crystal change.

Keywords

Semiconductor doping impurity

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