Articles | Open Access | DOI: https://doi.org/10.37547/tajiir/Volume06Issue11-03

INVESTIGATION OF THE WIDTH OF THE FORBIDDEN ZONEHEAVILY DOPED SEMICONDUCTORS

I. G. Tursunov , Chirchik State Pedagogical University, Uzbekistan
M. A. Rakhmanov , Chirchik State Pedagogical University, Uzbekistan

Abstract

The work examines changeswidth of the forbidden zoneheavily doped semiconductors. The introduction of impurities into the crystal lattice at low concentrations does not change the width forbidden zones semiconductor and does not affect the energy spectrum of electrons. Only discrete levels appear in the forbidden zone. When the concentration of impurities becomes large enough, the energy spectrum and the width of the BG of the crystal change.

Keywords

Semiconductor, doping, impurity

References

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I. G. Tursunov, & M. A. Rakhmanov. (2024). INVESTIGATION OF THE WIDTH OF THE FORBIDDEN ZONEHEAVILY DOPED SEMICONDUCTORS. The American Journal of Interdisciplinary Innovations and Research, 6(11), 10–14. https://doi.org/10.37547/tajiir/Volume06Issue11-03