Applied Sciences
OPEN ACCESS
Research Of The Boundary Of The Section Of A Photo Receiver Based On Mos pCdTe / CdO Structures
DOI
Crossref DOI
10.37547/tajas/Volume02Issue10-14
tajas
2020
VOL. 2
/ NO. 10
OCTOBER
RESEARCH OVERVIEW
Abstract
In this work, we investigated an intermediate layer in the structure of a photosensitive MOS structure nCdO / pCdTe . X-ray phase analysis shows that the intermediate layer between Mo and pCdTe is rather complex in composition. It contains dichalcogenides - three oxide MoO3 and a thin layer of a composite material with the composition of ditelluride MoTe2 . According to X-ray diffraction measurements, the total thickness of the intermediate layer is no more than ~ 200Ǻ. It was shown that in the nCdO / pCdTe structure the base material CdTe mainly consists of a homogeneous cubic modification layer.
RESEARCH TOPICS
Keywords
Intermediate layer
photosensitivity
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