Applied Sciences
OPEN ACCESS
Study Of The Influence Of Radiation Gamma And Thermal Annealing On The Dlts Spectra Of Diodes From Si (Cr)
DOI
Crossref DOI
10.37547/tajas/Volume02Issue10-06
tajas
2020
VOL. 2
/ NO. 10
OCTOBER
RESEARCH OVERVIEW
Abstract
It was shown from capacitive measurements that the concentration of chromium levels decreases after irradiation of the samples with gamma quanta of the 60Co isotope, and the rate of formation of A centres in Si (Cr) is 8-10 times higher than in the control samples.
RESEARCH TOPICS
Keywords
Irradiation
gamma quanta
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References
- Lebedev A.A., Sultanov N.A. (1970). Some properties of silicon doped with chromium. ФТП. 4(11). p. 2208-2210.
- Chen, J. W., & Milnes, A. G. (1980). Energy levels in silicon. AnRMS, 10, 157-228.
- Lebedev A.A., Sultanov N.A., Ekke V. (1986). Investigation of the effect of gamma irradiation on the spectrum of deep levels in silicon doped with zinc. ФТП. 21(1). p.p. 18-22.
- Lebedev, A. A., Sultanov, N. A., & Tuchkevich, V. M. (1971). N-type negative resistance and photoconductivity of sulfur-doped p-type Si(N-type negative resistance, photoconductivity and I-V characteristics of sulfur-doped p-type Si, showing hole capture cross-section dependence on the electric field). Soviet Physics-Semiconductors, 5, 25-31.
- Lebedev, A. A., Sultanov, N. A., & Ecke, W. (1987). Influence of uniaxial pressure on transient capacitance spectroscopy of deep levels in SI-ZN. Soviet Physics Semiconductors-USSR, 21(2), 193-195.