I. G. TURSUNOV; M. A. RAKHMANOV. INVESTIGATION OF THE WIDTH OF THE FORBIDDEN ZONEHEAVILY DOPED SEMICONDUCTORS. The American Journal of Interdisciplinary Innovations and Research, [S. l.], v. 6, n. 11, p. 10–14, 2024. DOI: 10.37547/tajiir/Volume06Issue11-03. Disponível em: https://www.theamericanjournals.com/index.php/tajiir/article/view/5610. Acesso em: 31 jul. 2025.